Abstract
The enhanced photoluminescence (PL) for In-rich copper indium sulfide quantum dots (CIS QDs) was observed. The conduction electron-Cu vacancy recombination and the donor–acceptor pair (DAP) defect recombination were considered to exist in CIS QDs at the same time. The temperature-dependent PL study showed that the emission of these QDs might be mainly originated from the recombination between electrons in the quantized conduction band and holes in the copper vacancy acceptor when x was 0.500 (CuxIn1−xS). However, the temperature coefficient of PL peak position decreased when x was 0.237. That meant the DAP recombination increased in the In-rich CIS QDs.
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