Abstract
Photoluminescence (PL) of InAs quantum dots (QDs) embedded in the Al0.30Ga0.70As/In0.15Ga0.85As/InGaAlAs/GaAs quantum wells (QWs) have been investigated in the temperature range of 10–500K for as grown samples and after thermal annealing at 640°C or 710°C for two hours. QD samples with the different InAlGaAs capping layers (GaAs or Al0.1Ga0.75 In0.15As) have been studied. The higher PL intensity and lower energy of ground state (GS) emission are detected in the structure with Al0.1Ga0.75 In0.15As layer. This QD structure in as grown state has smaller PL thermal decay in comparison with this parameter in the structure with GaAs layer. The variation of PL intensities and peak positions at annealing are more essential in the QD structure with Al0.1Ga0.75 In0.15As capping layer, apparently, due to more efficient Ga(Al)/In intermixing.
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