Abstract
Abstract It is shown that strong visible photoluminescence can be obtained directly from as-formed high-porosity porous silicon samples, without need for subsequent chemical dissolution. Light emission at wavelengths as short as 560 nm can be observed after further thinning of the silicon pore walls, but this emission vanishes quite rapidly upon oxidation in air. Much more stable luminescence characteristics have been found for porous layers with silicon walls thinned by an electrochemical oxidation process. With this method, the wavelength of the maximum light emission is determined by the anodic current density used, thus allowing a good control of the luminescence characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
