Abstract
Photoluminescence studies are made for GaxAl1-xAs mixed crystals doped with Te, Sn, Si, Ge and Zn. Broad low energy emission bands as well as near bandgap emission bands are observed. The near gap bands show changes in characteristics due to the transition from direct to indirect bandgap at composition (1-x)\\cong0.36. The low energy bands can be classified into two types. Bands of the first type are observed in the direct gap region and arise from the same origin as in GaAs. Bands of the second type are observed both in the indirect and direct gap regions except for small (1-x). From the composition dependence, it is suggested that the bands of the latter type are associated with the deep donor levels induced from the [100] conduction band minima.
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