Abstract
GaAs films grown on untilted Si substrates and prepared by molecular-beam epitaxy were characterized by low-temperature photoluminescence (PL) spectroscopy. The GaAs layer was irradiated in situ with a 50 keV electron beam during growth. The PL spectrum of the electron-beam-irradiated GaAs/Si consisted of four well-resolved peaks at 1.502, 1.488, 1.471, and 1.434 eV. The peaks at 1.502 and 1.488 eV are related to the intrinsic emissions, and the peaks at 1.471 and 1.434 eV originate from the extrinsic emission band. The full width at half-maximum of the 1.488 eV emission band is only 2.8 meV, which is much smaller than the value obtained from the unirradiated GaAs/Si. The strain induced in the GaAs layer was estimated from the intrinsic peaks observed in the temperature range of 5–200 K. The PL properties of the species after postgrowth treatment, such as rapid thermal annealing are discussed.
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