Photoluminescence of Erbium Implanted in SiGe

Abstract

The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er-related photoluminescence (PL) peaks were observed at around 1.5 µ m, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850° C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.