Abstract
In this letter, we report the results of copper-doped porous silicon. In the photoluminescence spectrum of porous silicon without Cu doping, only one red luminescence band appears with a peak at 676.5 nm; while in the photoluminescence spectrum of Cu-doped porous silicon, red and near infrared luminescence bands appear with peaks at 660.6 and 802.2 nm, respectively. Energy dispersive x-ray spectroscopy and Fourier transform infrared spectroscopy indicate the near infrared luminescence band is related to copper impurity in porous silicon. We assign the red luminescence band to band-to-band emission, and the near infrared luminescence band to band-to-acceptor emission.
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