Abstract
We have measured excitation dependence of photoluminescence (PL) spectra, excitation spectra of PL (PLE) and temporal dependence of the PL intensity in ZnO epitaxial thin films. The ZnO films were grown on a sapphire substrate with a GaN buffer layer to reduce a lattice mismatch. We succeeded in observing a PL due to biexciton for the first time in ZnO epitaxial thin films.
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