Abstract
We have investigated the photoluminescence properties of Zn-doped Ga1−xAlxAs grown by metalorganic chemical vapor deposition (MOCVD). The photoluminescence spectra exhibit weak bound-exciton lines, donor–acceptor pair transitions, free-to-bound excitons, and low energy broad bands. The Zn acceptor ionization energy is determined from the free-to-bound transitions as a function of aluminum concentration x up to 0.46. Two low energy bands have been observed in Zn-doped Ga1−xAlxAs. One is at ∼1.65 eV and is identified as due to the ZnGa–VAs complex. Another band has been observed at ∼1.81 eV from samples with x near or beyond the crossover. It is well separated from the band edge, but its origin is not yet well understood.
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