Year-end Sale % OFF 
Abstract
The growth aspects of 50 mm diameter gallium arsenide single crystals using LEC technique are presented. Defect investigations are made using photoluminescence studies. Photoluminescence studies on the wafers reveal the presence of the EL2 level, the presence of transition metal impurity copper which cannot be eliminated by surface treatments, and the presence of carbon. Photoluminescence scans are also obtained at room temperature to study the uniformity. The presence of carbon is also revealed by FTIR measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
