Abstract
Photoluminescence properties of highly p+-doped GaAs1−ySby are investigated. Band gap narrowing (BGN) effect is considered for heavily doped GaAs1−ySby epilayers. Band-gap Eg(GaAs1−ySby)=1.25y2−1.95y+1.519 is obtained through fitting band-gap energy obtained by PL spectra from 35 to 300 K. Fermi level (Ef) and full width at half maximum (FWHM) of photoluminescence increase with antimony mole fraction. The increase of Fermi level is attributed to hole mass of GaAs1−ySby decrease which is resulted from antimony composition increase. The increase of Fermi level means that more electrons participate in indirect transition to result in FWHM increases.
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