Abstract
Low-temperature photoluminescence measurement is performed on anundoped AlxGa1−xN/GaN heterostructure.Temperature-dependent Hall mobility confirms the formation oftwo-dimensional electron gas (2DEG) near the heterointerface. A weakphotoluminescence (PL) peak with the energy of ~79 meV lower thanthe free exciton (FE) emission of bulk GaN is related to the radiativerecombination between electrons confined in the triangular well and theholes near the flat-band region of GaN. Its identification is supportedby the solution of coupled one-dimensional Poisson and Schrödingerequations. When the temperature increases, the red shift of the 2DEGrelated emission peak is slower than that of the FE peak. The enhancedscreening effect coming from the increasing 2DEG concentration and thevarying electron distribution at two lowest subbands as a function oftemperature account for such behaviour.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
