Abstract
Low-temperature photoluminescence measurement is performed on anundoped AlxGa1−xN/GaN heterostructure.Temperature-dependent Hall mobility confirms the formation oftwo-dimensional electron gas (2DEG) near the heterointerface. A weakphotoluminescence (PL) peak with the energy of ~79 meV lower thanthe free exciton (FE) emission of bulk GaN is related to the radiativerecombination between electrons confined in the triangular well and theholes near the flat-band region of GaN. Its identification is supportedby the solution of coupled one-dimensional Poisson and Schrödingerequations. When the temperature increases, the red shift of the 2DEGrelated emission peak is slower than that of the FE peak. The enhancedscreening effect coming from the increasing 2DEG concentration and thevarying electron distribution at two lowest subbands as a function oftemperature account for such behaviour.
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