Abstract
Photoluminescence depth profiling measurements were carried out on SiN x /InP, SiN x /In 1- x Ga x As and SiN x /In 1- x Ga x As y P 1- y to identify the possible surface “damage” induced by plasma-enhanced chemical vapour deposition silicon nitride films. A PL intensity decrease is always seen after the semiconductor surface is coated with a silicon nitride. The initial PL intensity recovers in the case of InP and In 1- x Ga x As y P 1- y semiconductors. A definite PL intensity decrease is seen in the case of In 1- x Ga x As whatever the silicon nitride deposition conditions. Several suggestions for the causes of the common decrease of PL intensity and of the In 1- x Ga x As anomalous behaviour are given.
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