Abstract

Eu doped BaSO4 was prepared by the recrystallization method and characterization of the material was done by using X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) techniques. From the XRD pattern of Eu doped BaSO4 com- pound, it was found that the prominent phase formed was BaSO4 and traces of other phases were very weak and the result of FTIR spectrum of BaSO4:Eu shows that the sulfur-oxygen stretch was found at around 1100 cm−1. The room-temperature PL spectra of the Eu doped BaSO4 sample showed one peak centered at 374 nm, which is the characteristic emission of Eu2+ ion. This emission band at 374 nm corresponds to the 4f6 5d 4f7 (8S7/2) transitions of Eu2+ ions. The excitation spectrum taken at the wave- length 374 nm extends over a wide range of wavelengths from 220–350 nm with a strong peak at around 260 nm. Furthermore, the present sample shows good crystal quality and high photoluminescence sensitivity. Hence our results suggest possible potential applications of Eu doped BaSO4 phosphor in optoelectronic devices.

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