Abstract
KTiOPO4 (KTP) and RbTiOPO4 (RTP) crystals have been implanted with 500keV Er ions at a dose of 3×1015ions/cm2 with the aim of optically doping the material in the near surface region. The sample was annealed at 500°C for 90min in oxygen atmosphere after implantation. Photoluminescence (PL) and Rutherford backscattering spectrometry studies were performed on the as-implanted samples before and after annealing. 1.54μm photoluminescence emission was observed at both room-temperature and low-temperature in KTP without any annealing. After annealing luminescence intensity is improved at 12K and photoluminescence quenching were found at room temperature for both samples. The reasons are discussed in the paper.
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