Abstract
We have investigated the materials and photoluminescence properties of porous polysilicon films formed by chemical etching. The polysilicon samples were prepared by furnace crystallization of r.f. sputtered silicon films on a crystalline silicon substrate. The materials properties were observed by SEM, TEM, XRD and FTIR. XRD showed that the grains with (111) orientation have the highest etching rate and are probably most efficient in forming porous regions. The photoluminescence intensity depends on the annealing temperature of the sputtered Si film, and has a maximum value at a temperature around . This temperature dependence can be explained from the relative peak intensities of grains of different orientation measured by XRD. Rapid thermal oxidation of porous polysilicon films was found to degrade the photoluminescence intensity.
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