Abstract
Polysilane alloys are prepared by the rf glow discharge of disilane. The microscopic structure, which depends on substrate temperature, is discussed by measuring the infrared absorption spectrum and dangling bond density. Temperature dependence of the photoluminescence of polysilane alloys is measured and compared with that of conventional a-Si:H film. Based on the microscopic structure and calculated energy level for polysilane molecules, a three dimensional quantum well model is proposed for the band structure of polysilane alloys. This model is consistent with photoluminescence and related optical properties.
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