Abstract
An epitaxial GaN layer was doped with the radioactive isotope 191Pt by ion implantation at the online mass separator facility ISOLDE at CERN (energy 60keV, maximum dose of 3×1012ions/cm2). The isotope 191Pt decays with a half-life of 2.9d into stable 191Ir. After annealing at 1300K several Pt-related photoluminescence transitions in the near-infrared region are detected. Platinum is found to produce near-infrared luminescence consisting of two single transitions (Pt1) at 1.461 and 1.446eV followed by a set of transitions (Pt2) starting at 1.273eV each separated by 15meV in energy. The photoluminescence spectra recorded within 30 days after implantation will be presented. The half-lives resulting from exponential fits to the intensities of these optical transitions yield half-lives of t1/2(Pt1)=(2.6±0.6)d and t1/2(Pt2)=(3.1±0.3)d, respectively, in very good agreement with the nuclear half-life of the isotope 191Pt. Therefore, the recombination centers responsible for this near-infrared luminescence have to involve exactly one Pt atom. We do not observe any other changes in the whole spectral region between 0.9 up to 3.5eV, in particular no new lines turn up, so we conclude that iridium does not introduce any optically active recombination centers in GaN.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
