Abstract
The photoluminescence in nanostructures with InGaAsSb/AlGaAsSb quantum wells of different widths is investigated experimentally under different pumping levels and theoretically. The experimentally determined dependencies of photoluminescence intensity on the optical pumping level are compared with the calculated dependences of photoluminescence intensity on the nonequilibrium carrier concentration. The presence of resonant nonradiative Auger recombination in one of the investigated samples is proved by the comparison between experiment and calculations.
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