Photoluminescence from GaN Implanted with Be and F

Abstract

GaN samples are implanted with Be and F and annealed in different conditions to activate the BeGa acceptors. Photoluminescence spectra are studied to recognize the defects. The UVLBe band with a maximum at 3.38 eV and the YLBe band with a maximum at 2.15 eV are observed and associated with Be. The sequential implantation of Be and F ions into GaN at 600 °C reduces the concentration of nitrogen vacancies (VN), as evidenced by the lack of the green luminescence band associated with the isolated nitrogen vacancy. First‐principles calculations are employed to find parameters of defects that can form after implantation.