Abstract
GaAs/AlGaAs quantum well (QW) structures with InAs monomolecular planes are fabricated by flow-rate modulation epitaxy. The InAs planes cause an energy shift of photoluminescence (PL) toward the lower energy side, and improve the PL efficiency. This suggests that the InAs planes efficiently localize the carriers in QWs. The PL photon energies of QWs with two InAs planes are lower than those of QWs with one plane, and increase with distance between the two InAs planes. Experimental data are in good agreement with a finite square well model calculation using a valence band discontinuity between strained InAs and GaAs of 40% of the band gap difference, as determined by photoluminescence excitation measurement.
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