Abstract
AbstractErbium (Er) ions were implanted into 4H and 6H silicon carbide (SiC). The temperature-dependent photoluminescence (PL) and PL lifetime were characterized. The optimum annealing temperature for SiC : Er were 1600 °C, PL intensity decreased at 1700 ° C, and the bandedge luminescence changed in relation to the luminescence of Er3+. Thermal quenching of the luminescence of Er3+ was suppressed by using SiC with a wide band gap as a host material. The Er3+ -PL was observed at room temperature (RT). We monitored the auger effect that is believed to be the main cause of the thermal quenching process and concluded that, in the temperature range 15 K to 70 K, the thermal quenching process has a close relation to nonradiative recombination from the first excited state (4I13/2) to the ground state (4I15/2) of Er3+.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
