Abstract
CdS semiconductor nanocrystals were grown as quantum dots (QDs) inside a silica matrix obtained by the sol-gel method and assisted in the mother liquid by high power ultrasounds. Small-angle neutron scattering (SANS) accounts for a 3.6 nm crystal size homogeneously distributed. Optical excitation from the third harmonic of a Nd:YAG ns laser was focused on the sample to study the photoluminescence (PL) at room temperature. The PL spectrum shows radiative process from intrinsic transitions and a broad band corresponding to the traps. Variable stripe length (VSL) method was used to measure the optical gain spectra by the growth of the amplified luminescence. A broad optical gain spectrum produced by the biexciton-exciton transitions revealing the stimulated emission from the CdS QDs. It is also observed a red-shift of the PL emission crystal size-dependent.
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