Abstract
A broad photoluminescence (PL) band at ~ 1.17 eV is observed for as-anodized porous Ge (PG) at room temperature. Oxidation at 600 °C induces a new intense PL band at ~ 2.15 eV whose spectral shape remains almost unchanged with progressive oxidation. Considering this result and the observed temperature dependence and decay time of the PL from thermally oxidized PG, it has been suggested that the radiative recombination through localized states is a possible pathway of the emission.
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