Abstract
The low temperature (2K) photoluminescence of gallium antimonide doped by iron have been studied at a zero magnetic field. The samples were prepared by the float-zone method. The concentration of Fe in the melt was in the range of 0.001 1 atomic percent. The samples had a p-type of conductivity and it was shown that the Fe in GaSb formed the shallow acceptor level with the ionization energy of 23 ± 2 meV. The concentration of shallow acceptors determined from the Hall measurements is in a good agreement with the concentration of the Fe acceptors obtained from the photoluminescence.
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