Abstract
ABSTRACTPLE spectroscopy was performed on samples of porous Si at temperatures of 300 and 4.2 K. PLE provides information about the absorption coefficient in the limit of optically thin samples and is an alternative method for determining absorption data on porous Si without removal of the substrate. The spectra obtained correspond closely to the relative changes in absorption coefficient for bulk Si between 2.0 and 3.5 eV, with a strong increase above 3.0 eV which is due to the direct bandgap transition.
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