Abstract
We present new results on infrared photoluminescence and photoluminescence excitation spectroscopy in . We find that the phonon coupling significantly influences the optical spectra of this direct narrow-gap semiconductor. In a small spectral region close to the fundamental energy gap, indirect `hot exciton' absorption with participation of longitudinal optical phonons is the main absorption mechanism. A qualitative theoretical explanation is given. Furthermore, new experimental arguments for the excitonic nature of the optical transitions in the spectral region of the fundamental gap in this narrow-gap material are provided. We find that knowledge about the excitonic processes in wide-gap semiconductors can also be applied to high-quality narrow-gap materials.
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