Abstract
Unconfined transition doublet peaks have been observed in GaAs Al x Ga 1− x As superlattices at 5 K by photoluminescence excitation spectroscopy and by resonance Raman spectroscopy. The Raman scattering experiments were carried out with longitudinal optical phonons of the barrier layers. The doublets arise from the energy subband dispersion along the superlattice growth direction.
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