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Abstract
Crystal qualities of Si∕SiGe∕Si-on-insulator structures with different SiGe thicknesses were evaluated by photoluminescence (PL). The wafers were annealed at different temperatures with a ramping rate of 5°C∕min. Free exciton PL peaks were clearly observed for the as-grown wafers and decreased with an increase in the annealing temperature. For the annealed wafers, defect-related PL signals were observed at around 0.82, 0.88, 0.95, and 1.0eV, which varied according to the annealing temperature and the SiGe thickness. They were also correlated to dislocation-related defects by transmission electron microscopy.
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