Abstract
High quality InN films have been grown on (0001) sapphire substrates by metalorganic molecular beam epitaxy, characterized for crystal structure, chemical composition, and optical properties. Depth profiling indicated a high, increasing oxygen concentration profile towards the volume of the film. Photoluminescence revealed two different, coexisting features: a low energy transition around 0.8 eV, and a high energy feature, peaking near 2 eV. The former band originates from the direct transition in the near surface range. The latter, low intensity band results from the bulk region. Oxynitride formation has been accounted for a spatially varying optical band gap EG, determined to 0.61 eV for pure, defect free material. X-ray diffraction analysis supports defect mediated lattice instability, as proposed recently by a molecular dynamic lattice theory.
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