Abstract
AbstractWe have investigated the photoluminescence (PL) dynamics of a ZnO thin film under intense excitation conditions at 10 K. In the ZnO thin film, a PL band due to exciton‐exciton scattering, the so‐called P emission, appears. The optical‐Kerr‐gating method with the ultrashort gating time of 0.6 ps enabled us to obtain precise information of the temporal profiles including the peak energy, the bandwidth and the intensity of the P emission, at various detection energies. We have found that the decay time of the P emission gradually shortens with decreasing detection energy. The change in the decay time can be reasonably attributed to the photon‐like characteristics of the lower polariton branch that is the final state of the exciton‐exciton scattering. Furthermore, we have shown that the decay time of the P emission is phenomenologically determined by the group velocity of the final state although the origin of the long decay time remains to be elucidated (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
