Photoluminescence Characteristics of Multilayer HfSe2 Synthesized on Sapphire Using Ion Implantation

Abstract

AbstractThe multilayer HfSe2 on sapphire is first fabricated by the ion beam‐assisted process combining ion implantation with the post annealing. The A1g mode of HfSe2 is shown in the Raman spectrum, the X‐ray photoelectron spectroscopy results indicate the existence of Hf–Se bonding, and the transmission electron microscopy analysis exactly identifies the crystal structure of HfSe2. The six‐layered (6L) octahedral HfSe2 (1T‐HfSe2), whose band structure is well realized by utilizing photoluminescence spectroscopy compared with the results of the density functional theory calculation, is formed via the Hf selenization during annealing.