Abstract
Photoluminescence brightening due to the partial Auger recombination process of the (D0,X) complex has been investigated in high‐purity n‐ GaAs under a pulsed electric field. From the photoluminescence spectrum, the anomalous photoluminescence brightening of the current density filament was attributed to be caused by the partial Auger recombination process of the (D0,X) complex during impact ionization avalanche.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
