Abstract
Photoluminescence measurements were carried out to investigate the origin of long wavelength emissions (∼1.6μm at room temperature) observed from wafers with InAs quantum dots capped with GaAsSb layers. For wafers with high Sb content (22% and 26%) photoluminescence peak energies were found to be linearly proportional to third root of optical excitation power, a characteristic of emission due to a type-II band alignment. This work therefore presents unambiguous evidence that the long wavelength emission of the wafers comes from type-II band alignment between the InAs quantum dots and the GaAsSb capping layers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Microelectronics Journal
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
