Abstract
Application of room temperature, edge-band, carrier-lifetime-reliant photoluminescence metrology for characterization of contamination and defectivity in Si and SiGe materials is discussed in the paper. The physics of the technique is illustrated using 2D-Axisymmetric PL intensity modeling examples. PL signals are simulated for a variety of ion-implanted Ultra Shallow Junction (USJ) silicon and epitaxial Si/SiGe/Si structures. High PLi sensitivity to defect presence, ion implantation dose, energy, specie and implantation conditions (implanter tool signatures) is demonstrated and ultimately applied to detect process variations at sub-1% levels. Examples of quantifiable doping activation effects, defect re-growth kinetics, contamination presence, annealing quality, and formation and relaxation of extended defects are also provided.
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