Abstract
At the UCSB free-electron laser we have realized a set-up to detect the photoluminescence from semiconductor quantum structures while they are irradiated with intense far-infrared radiation. The effect of the radiation on both quantum wells and quantum-well wires has been identified with non-resonant carrier heating. The confined carriers in these structures have energy-level spacings in the far-infrared region of the spectrum. The tunability of the free-electron laser therefore allows the study of resonant effects as well.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
