Abstract
ZnO:Sn microdisks were fabricated by a vapor phase transport method at different pressure conditions. The photoluminescence of the ZnO:Sn microdisks was measured, and the origination of defect emission was attributed to the oxygen vacancy defects. Under the excitation of the 532 nm line of a femtosecond pulsed laser, two-photon absorption induced UV amplified spontaneous emission and whispering-gallery mode lasing were observed from the ZnO:Sn microdisks. The electron–hole plasma induced red-shift and broadening of the amplified spontaneous emission and lasing emission were demonstrated when the excitation power was increased. In addition, the WGM lasing light distribution was simulated by a numerical method.
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