Abstract
Ce3+ and Eu2+ activated BaAlSi5O2N7 phosphors have been prepared by the modified three step solid state diffusion method. Prepared phosphors are characterized by XRD, SEM, photoluminescence and thermoluminescence techniques. Upon excitation at 234nm, Ce3+ activated BaAlSi5O2N7 phosphor shows strong emission at 360nm. Upon excitation at 348nm, Eu2+ activated BaAlSi5O2N7 phosphor shows strong emission at 469nm in the blue region of the optical spectrum. After quenching at higher temperature and upon excitation at 363nm, BaAlSi5O2N7:Eu2+ phosphor shows broad band at 516nm in the green region of the optical spectrum. The trap parameters are studied using glow curve deconvolution. It was found that the obtained samples may be suitable for near UV excited white light emitting diodes.
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