PHOTOLUMINESCENCE AND THERMAL PROPERTIES OF Er-DOPED As-Se-Ga-Ge BASED GLASSES

Abstract

We studied the photoluminescence characteristics and thermal properties of Er-doped As-Se-Ga-Ge based chalcogenide glasses alloyed with different amounts of Ge (1 to 15 at. %) for use as optical amplifiers at 1550 v nm operation. We used a 980 v nm laser diode to optically excite the Er-doped glass samples. The 980 v nm pumping induced a 1550 v nm photoluminescence output signal. We measured the lifetime of the exited Er state in these chalcogenide glasses as a function of Er doping up to 3 at. %, and Ge composition from 1 to 15 at. %. We also carried out Temperature-Modulated Differential Scanning Calorimetry measurements to study the thermal stability of these glasses.