Photoluminescence and reflection high-energy electron diffraction study of GaAs/AlxGa1−xAs(100) single quantum wells grown via molecular beam epitaxy employing two forms (As2 and As4) of arsenic

Abstract

Photoluminescence (PL) and intensity behavior of a reflected high-energy electron diffraction (RHEED) beam are examined for GaAs/AlxGa1−xAs (x=0.5 and 0.7) single quantum wells grown via molecular beam epitaxy under dimeric (As2) and tetrameric (As4) arsenic pressures. The growth conditions for AlxGa1−xAs and GaAs layers in a single quantum well are determined via RHEED. Results show that PL linewidth and intensity are correlated with RHEED intensity and that the dual arsenic source scheme produces superior quality GaAs/AlxGa1−xAs heterostructures.