Abstract
The photoluminescence bands in the visible and in the infrared of porous SiGe layers with initial Ge contents of 5% and 20%, prepared by anodical etching, are investigated at different temperatures. At room temperature the photoluminescence spectra are dominated by an intense red photoluminescence band centered at 1.8 eV. A weaker blue photoluminescence band is also observed which becomes more important at low temperatures. Raman measurements indicate only a low degree of confinement in our porous SiGe layers. The occurrence of blue–green luminescence seems to originate from the oxygen inclusions in the crystalline porous structure. Infrared photoluminescence spectroscopy on the porous layer shows that the broad infrared band known from porous Si is missing in the porous SiGe layers, but transitions via defects in the crystalline structure of the porous layers are observed.
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