Abstract
Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated withCNxfilms located at ≈2.13±0.02 eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominantDband.ID/IGratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp2/sp3ratio due to presence of high nitrogen content.
Highlights
Light elements based materials which associate 2p and 3p elements, mainly from columns III to V of the periodic system, are of great interest due to their physicochemical properties
CNx Films Deposited on Glass as Substrate
We have identified two main contributions: a first signal associated with the CNx film 2 eV emerging having a from the narrow peak located at ≈ 2.13 lon pair-π∗ state transitions and
Summary
Light elements based materials which associate 2p and 3p elements, mainly from columns III to V of the periodic system, are of great interest due to their physicochemical properties In this sense, the elevate hardness, chemical inertia, good thermal conductivity, optical transparency (on a wide wave number range), highly refractory character, electric insulator behavior, and high band gap values are the most representative [1]. The reported characteristics have provided evidence for a possible utilization in optoelectronic devices, such as electroluminescence devices [7] or photovoltaic solar cells In this sense, the optical properties of α-CNx have been extensively studied via diverse techniques such as Raman, photoluminescence (PL), or absorption spectroscopy. Raman spectroscopy was used to explore sp hybridization state and the average microstructure of the deposited α-CNx films and substrates
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