Photoluminescence and Raman scattering studies of 2 MeV Yb+-implanted InP as a function of etching depth

Abstract

In ion-implanted semiconductors, details of the defects involved and annealing mechanisms which determine the final disorder structure are complicated and difficult to characterize. To investigate the residual defect distribution of the implanted layers, optical experiments, photoluminescence, photoluminescence excitation, and Raman scattering have been performed on 2 MeV Yb+-implanted InP and subsequently annealed at 750 °C for 15 min as a function of chemical etching depth (d) down to d=4.51×Rp (Rp: projected range =410 nm). Their results were compared with those obtained from Rutherford backscattering spectrometry (RBS) channeling analysis. The above optical experiments showed that two residual defective regions are present at depths of d=0.34–0.80×Rp and about d=2.56×Rp, whereas RBS channeling analysis indicated the existence of the only former region. We assign the type of the two defective regions to ‘‘clamshell’’ defects in the former region and to ‘‘end-of-range’’ defects in the latter region.