Abstract
Ion-implantation effects on a series of comparable asymmetrically-coupled GaAs/AlGaAs quantum wells processed by implantation method have been studied by photoluminescence (PL) and photo-modulated reflectance (PR) spectroscopy measurements. The peaks in the PL and PR spectra originate from the intersubband transitions between the ground states of electron state and hole states. Corresponding peak positions in the PL and PR spectra shift to higher energies following the increase of the ion-implantation dose due to the enhanced Al diffusion across the GaAs/AlGaAs and GaAs/AlAs heterointerfaces in the system. The observation of the reduction and finally the quench of the PL and PR peaks due to the increased implantation dose is explained by the reduced lifetime of carriers in the system due to the increased scattering processes.
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