Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE

Abstract

In 0.056 Ga 0.944 P 0.975 N 0.025 / GaP lattice-matched single quantum wells (SQWs) have been grown on GaP (0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE). Low-temperature (10 K) photoluminescence (PL) and PL excitation (PLE) measurements for the varied well widths ( L Z = 1.6 , 2.4, 3.2 and 6.4 nm) have been revealed to confirm the quantum confinement by the well. Comparing with the bulk layer, the PL peak position blue shift amounts to 76 meV for the narrowest well of L Z = 1.6 nm . On the other hand, the PLE spectra have shown the blue shift of the fundamental absorption edge to 2.17 eV for L Z = 1.6 nm from 2.06 eV for the bulk. The blue shift is about 110 meV. In these samples, the PL and PLE blue shifts are believed to be predominantly determined by the quantum confinement effect to the well. Further results show a high-temperature PL has been far more enhanced than in the bulk due to the large conduction band offset Δ E c .