Photoluminescence and optoelectronic characteristics of Ga1-xTbxP QDs developed using 2,7-tetrakis(-N,N-di-p-methoxyphenyl-amine)9-spirobifluorene assisted hydrothermal approach for lasing and optical gain devices

Abstract

Here, we report about the synthesis, photoluminescence and optoelectronic characteristics of Ga1-xTbxP QDs developed using 2,7-tetrakis(-N,N-di-p-methoxyphenyl-amine)9-spirobifluorene assisted hydrothermal approach for lasing and optical gain devices. The developed Ga1-xTbxP QDs disclosed cubic crystalline structural phases and the particle size increased from 3 nm to 9.4 nm. The optical bandgap changed from 3.2 eV to 2.64 eV. The Tb-dopant resulted in multicolor modulation of the emission luminescent spectra from 414 nm to 513 nm. The photoluminescence emission spectra were amplified by 10 times and the quantum yield increased from 16 to 86 %. It was found that the Tb-dopant created sublevels below the GaP conduction bands which behaved like fluorescent centers. The amplification of emitted light photons and the unique luminescent characteristics that have been obtained may raise the opportunity to employ the Ga1-xTbxP QDs as promising optical amplifiers and lasing materials.