Abstract
We have investigated photoluminescence (PL) properties of a high quality GaN thin film grown by metal organic vapor phase epitaxy under intense excitation conditions in a high temperature regime from 120K to room temperature. It is found that a PL band peculiar to intense excitation conditions appears with a threshold-like behavior. The energy spacing between the PL band at the threshold excitation power and the A exciton is proportional to temperature. The extrapolation of the linear dependence results in zero value of the energy spacing at absolute zero temperature. These PL profiles are specific to an emission process originating from exciton-electron scattering. Furthermore, we have demonstrated that the exciton-electron scattering process produces optical gain at room temperature from measurements of PL with a variable stripe-length method.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.