Abstract
A detailed study has been made of the photoluminescence (PL) behaviour of high T D, undoped, glow-discharge a-Si, prepared by the Dundee group. Our measurements include temperature and field quenching of the luminescence and PL decay in the region 2 ns to ∼20 μs. Some recombination models for a-Si are briefly reviewed in the light of these results. Preliminary life-time data on doped a-Si are also presented and used to discuss our earlier measurements on the PL efficiency of doped samples. We conclude that a distribution of radiative lifetimes is present in a-Si, due to disorder. The main competitive non-radiative process is tunnelling to defects.
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