Abstract
Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. Red (1.6-1.7 eV) and orange (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate that an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.
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