Abstract
The Persistent Photoconductivity (PPC) effect was studied in individual tin oxide (SnO2) nanobelts as a function of temperature, in air, helium, and vacuum atmospheres, and low temperature Photoluminescence measurements were carried out to study the optical transitions and to determine of the acceptor/donors levels and their best representation inside the band gap. Under ultraviolet (UV) illumination and at temperatures in the range of 200 to 400K we observed a fast and strong enhancement of the photoconductivity, and the maximum value of the photocurrent induced increases as the temperature or the oxygen concentration decreases. By turning off the UV illumination the induced photocurrent decays with lifetimes up to several hours. The photoconductivity and the PPC results were explained by adsorption and desorption of molecular oxygen at the surface of the SnO2 nanobelts. Based on the temperature dependence of the PPC decay an activation energy of 230 meV was found, which corresponds to the energy necessary for thermal ionization of free holes from acceptor levels to the valence band, in agreement with the photoluminescence results presented. The molecular-oxygen recombination with holes is the origin of the PPC effect in metal oxide semiconductors, so that, the PPC effect is not related to the oxygen vacancies, as commonly presented in the literature.
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